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dc.contributor.authorTorres Álvarez, Fabián
dc.contributor.authorGak Szollosy, Joel
dc.contributor.authorArnaud Maceira, Alfredo
dc.contributor.authorMíguez, Matías
dc.date.accessioned2022-09-01T21:29:37Z
dc.date.accessioned2022-09-21T22:21:56Z
dc.date.available2022-09-01T21:29:37Z
dc.date.available2022-09-21T22:21:56Z
dc.date.issued2020
dc.identifier.urihttps://hdl.handle.net/20.500.12032/46872
dc.description.abstractThe design of an almost fully integrated phase-cut dimmer is presented. The circuit was designed on a 1um ultra high voltage (UHV) MOS technology in a silicon-on-insulator (SOI) wafer. The dimmer can operate with a duty cycle of up to 95% power (80%) and a load of up to 100 W which is adequate for modern domestic dimmable LED lights. The total occupied silicon area is 6.5 mm 2 without pads.es
dc.description.sponsorshipAgencia Nacional de Investigación e Innovaciónes
dc.format.mimetypeapplication/pdf
dc.language.isoenes
dc.publisherIEEEes
dc.relation.ispartofArgentine Conference on Electronics (CAE), 2020.es
dc.subjectCircuitos integradoses
dc.subjectAtenuador (Electrónica)es
dc.subjectSistemas eléctricos de potenciaes
dc.titleAn Integrated 350V Dimmeres
dc.typeArtículoes


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