A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor

dc.contributor.author	Costa, Diego
dc.contributor.author	Míguez, Matías
dc.contributor.author	Gak Szollosy, Joel
dc.contributor.author	Arnaud Maceira, Alfredo
dc.date.accessioned	2022-09-01T21:52:03Z
dc.date.accessioned	2022-09-21T22:14:16Z
dc.date.available	2022-09-01T21:52:03Z
dc.date.available	2022-09-21T22:14:16Z
dc.date.issued	2020
dc.identifier.uri	https://hdl.handle.net/20.500.12032/46217
dc.description.abstract	In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.	es
dc.description.sponsorship	Agencia Nacional de Investigación e Innovación	es
dc.format.mimetype	application/pdf
dc.language.iso	en	es
dc.publisher	IEEE	es
dc.relation.ispartof	Argentine Conference on Electronics (CAE), 2020	es
dc.subject	Circuitos integrados	es
dc.subject	Topología	es
dc.subject	Transistores	es
dc.subject	Estándares	es
dc.subject	Espejos de corriente	es
dc.title	A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor	es
dc.type	Artículo	es

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