| dc.contributor.author | Bordallo C.C.M. | |
| dc.contributor.author | Teixeira F.F. | |
| dc.contributor.author | Silveira M.A.G. | |
| dc.contributor.author | Martino J.A. | |
| dc.contributor.author | Agopian P.G.D. | |
| dc.contributor.author | Simoen E. | |
| dc.contributor.author | Claeys C. | |
| dc.date.accessioned | 2019-08-19T23:47:19Z | |
| dc.date.available | 2019-08-19T23:47:19Z | |
| dc.date.issued | 2014 | |
| dc.identifier.citation | BORDALLO, C. C. M.; SILVEIRA, M. A. G.; TEIXEIRA, F. F.; MARTINO, J. A.; AGOPIAN, P. G. D.; CLAEYS, C.; SIMOEN, E.. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation. Semiconductor Science and Technology, v. 29, n. 12, p. 125015, 2014. | |
| dc.identifier.issn | 1361-6641 | |
| dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/1457 | |
| dc.description.abstract | © 2014 IOP Publishing Ltd.The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on- insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing the p- and n-MuGFET response to radiation, x-rays can be more harmful for nMuGFETs than for the p-type counterparts due to the back-interface leakage current, which is generated by the positive charges trapped in the buried oxide. However, in pMuGFETs, the radiation tends to suppress the parasitic back-conduction, resulting in an improvement of the device performance. | |
| dc.relation.ispartof | Semiconductor Science and Technology | |
| dc.rights | Acesso Restrito | |
| dc.title | Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation | |
| dc.type | Artigo | |
