Study of proton radiation effects among diamond and rectangular gate MOSFET layouts

dc.contributor.author	SEIXAS, L E
dc.contributor.author	FINCO, S
dc.contributor.author	SILVEIRA, M A G
dc.contributor.author	MEDINA, N H
dc.contributor.author	GIMENEZ, S P
dc.date.accessioned	2019-08-19T23:47:19Z
dc.date.accessioned	2022-09-21T19:52:02Z
dc.date.available	2019-08-19T23:47:19Z
dc.date.available	2022-09-21T19:52:02Z
dc.date.issued	2017
dc.identifier.citation	SEIXAS, L E; FINCO, S; SILVEIRA, M A G; MEDINA, N H; GIMENEZ, S P. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, v. 4, n. 1, p. 015901, 2017.
dc.identifier.issn	2053-1591
dc.identifier.uri	https://hdl.handle.net/20.500.12032/40885
dc.relation.ispartof	Materials Research Express
dc.rights	Acesso Aberto
dc.title	Study of proton radiation effects among diamond and rectangular gate MOSFET layouts	pt_BR
dc.type	Artigo	pt_BR

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