Study of proton radiation effects among diamond and rectangular gate MOSFET layouts
| dc.contributor.author | SEIXAS, L E | |
| dc.contributor.author | FINCO, S | |
| dc.contributor.author | SILVEIRA, M A G | |
| dc.contributor.author | MEDINA, N H | |
| dc.contributor.author | GIMENEZ, S P | |
| dc.date.accessioned | 2019-08-19T23:47:19Z | |
| dc.date.accessioned | 2022-09-21T19:52:02Z | |
| dc.date.available | 2019-08-19T23:47:19Z | |
| dc.date.available | 2022-09-21T19:52:02Z | |
| dc.date.issued | 2017 | |
| dc.identifier.citation | SEIXAS, L E; FINCO, S; SILVEIRA, M A G; MEDINA, N H; GIMENEZ, S P. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, v. 4, n. 1, p. 015901, 2017. | |
| dc.identifier.issn | 2053-1591 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/40885 | |
| dc.relation.ispartof | Materials Research Express | |
| dc.rights | Acesso Aberto | |
| dc.title | Study of proton radiation effects among diamond and rectangular gate MOSFET layouts | pt_BR |
| dc.type | Artigo | pt_BR |
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