The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime
| dc.contributor.author | DORIA, Rodrigo Trevisoli | |
| dc.contributor.author | TREVISOLI, Renan Doria | |
| dc.contributor.author | DE SOUZA, Michelly | |
| dc.contributor.author | CUETO, Magali Estrada | |
| dc.contributor.author | CERDEIRA, Antonio | |
| dc.contributor.author | Pavanello, Marcelo Antonio | |
| dc.date.accessioned | 2019-08-19T23:45:11Z | |
| dc.date.accessioned | 2022-09-21T19:51:56Z | |
| dc.date.available | 2019-08-19T23:45:11Z | |
| dc.date.available | 2022-09-21T19:51:56Z | |
| dc.date.issued | 2014 | |
| dc.identifier.citation | DORIA, Rodrigo Trevisoli; TREVISOLI, Renan Doria; DE SOUZA, Michelly; CUETO, Magali Estrada; CERDEIRA, Antonio; Pavanello, Marcelo Antonio. The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 9, n. 2, p. 110-117, 2014. | |
| dc.identifier.issn | 1807-1953 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/40867 | |
| dc.relation.ispartof | JICS. Journal of Integrated Circuits and Systems (Ed. Português) | |
| dc.rights | Acesso Restrito | |
| dc.title | The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime | pt_BR |
| dc.type | Artigo | pt_BR |
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