The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

dc.contributor.author	DORIA, Rodrigo Trevisoli
dc.contributor.author	TREVISOLI, Renan Doria
dc.contributor.author	DE SOUZA, Michelly
dc.contributor.author	CUETO, Magali Estrada
dc.contributor.author	CERDEIRA, Antonio
dc.contributor.author	Pavanello, Marcelo Antonio
dc.date.accessioned	2019-08-19T23:45:11Z
dc.date.accessioned	2022-09-21T19:51:56Z
dc.date.available	2019-08-19T23:45:11Z
dc.date.available	2022-09-21T19:51:56Z
dc.date.issued	2014
dc.identifier.citation	DORIA, Rodrigo Trevisoli; TREVISOLI, Renan Doria; DE SOUZA, Michelly; CUETO, Magali Estrada; CERDEIRA, Antonio; Pavanello, Marcelo Antonio. The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 9, n. 2, p. 110-117, 2014.
dc.identifier.issn	1807-1953
dc.identifier.uri	https://hdl.handle.net/20.500.12032/40867
dc.relation.ispartof	JICS. Journal of Integrated Circuits and Systems (Ed. Português)
dc.rights	Acesso Restrito
dc.title	The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime	pt_BR
dc.type	Artigo	pt_BR

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