This article aims at proposing a compact analytical model for the low-frequency noise (LFN) of junctionless nanowire transistors (JNTs), operating at different bias conditions and temperatures. The model is validated through tridimensional numerical simulations, accounting for different trap configurations, as well as devices with different channel lengths, nanowire widths, and doping concentrations. Experimental results of short-channel junctionless transistors have also been used to demonstrate the model's applicability and accuracy.
