A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor
| dc.contributor.author | PERIN, A. L. | |
| dc.contributor.author | PEREIRA, A. S. N. | |
| dc.contributor.author | AGOPIAN, P. G. D. | |
| dc.contributor.author | MARTINO, J. A. | |
| dc.contributor.author | GIACOMINI, R. | |
| dc.date.accessioned | 2019-08-19T23:45:14Z | |
| dc.date.accessioned | 2022-09-21T19:51:23Z | |
| dc.date.available | 2019-08-19T23:45:14Z | |
| dc.date.available | 2022-09-21T19:51:23Z | |
| dc.date.issued | 2012 | |
| dc.identifier.citation | PERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.; MARTINO, J. A.; GIACOMINI, R.. A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 7, n. 2, p. 100-106, 2012. | |
| dc.identifier.issn | 1807-1953 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/40758 | |
| dc.relation.ispartof | JICS. Journal of Integrated Circuits and Systems (Ed. Português) | |
| dc.rights | Acesso Restrito | |
| dc.title | A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor | pt_BR |
| dc.type | Artigo | pt_BR |
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