Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs
| dc.contributor.author | SEIXAS, LUIS E. | |
| dc.contributor.author | GONCALVEZ, O. L. | |
| dc.contributor.author | VAZ, R. G. | |
| dc.contributor.author | TELLES, A. C. C. | |
| dc.contributor.author | FINCO, S. | |
| dc.contributor.author | GIMENEZ, S. P. | |
| dc.date.accessioned | 2019-08-19T23:45:29Z | |
| dc.date.accessioned | 2022-09-21T19:50:02Z | |
| dc.date.available | 2019-08-19T23:45:29Z | |
| dc.date.available | 2022-09-21T19:50:02Z | |
| dc.date.issued | 2019 | |
| dc.identifier.citation | SEIXAS, LUIS E.; GONCALVEZ, O. L.; VAZ, R. G.; TELLES, A. C. C.; FINCO, S.; GIMENEZ, S. P.. Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs. Journal of Materials Science: Materials in Electronics, v. 1, n. 1, p. 1-13, 2019. | |
| dc.identifier.issn | 1573-482X | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12032/40490 | |
| dc.relation.ispartof | Journal of Materials Science: Materials in Electronics | |
| dc.rights | Acesso Aberto | |
| dc.title | Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs | pt_BR |
| dc.type | Artigo | pt_BR |
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