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Compact core model for Symmetric Double-Gate Junctionless Transistors
(2014)
A new charge-based compact analytical model for Symmetric Double-Gate Junctionless Transistors is presented. The model is physically-based and considers both the depletion and accumulation operating conditions including ...
Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors
(2013)
A new charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors (SDGJLTM) is proposed and validated with simulations for doping concentrations of 5 × 1018 and 1 × 10 19 cm-3, as well as ...
A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation
(2005)
In this work a continuous analytical model for analog simulation of submicron asymmetrically doped silicon-on-insulator (SOI) nMOSFET using the graded-channel (GC) architecture, valid from weak to strong inversion regimes, ...