Now showing items 11-18 of 18
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs
(2008)
This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-κ dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is ...
High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures
(2005)
This work studies the use of channel engineering by means of graded-channel profile on double gate SOI MOSFETs for improving the analog performance and comparing their output characteristics with conventional double gate ...
Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation
(2007)
This work presents the analog performance of nMOS triple-gate FinFETs with high-κ dielectrics, TiN gate material and undoped body from DC measurements. Different fin widths and devices with and without halo implantation ...
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
(2009)
The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that ...
Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts
(2006)
This work presents a new and simple approach for modeling silicon on insulator metal-oxide-semiconductor (MOS) dc characteristics for nonrectangular layout devices, based on decomposition of the original shape into trapezoidal ...
A simple current model for edgeless SOI nMOSFET and a 3-D analysis
(2005)
This work presents a new approach for the current model of thin-film, fully depleted SOI edgeless transistors, based on the asymmetric trapezoidal gate model. The most common current model for an edgeless transistor is ...
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
(2006)
This paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. ...
Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects
(2008)
Fin field effect transistors (FinFETS) are silicon-on-insulator (SOI) transistors with three-dimensional structures. As a result of some fabrication-process limitations (as nonideal anisotropic overetch) some FinFETs have ...