Centro Universitario FEI: Recent submissions
Itens para a visualização no momento 1441-1460 of 2182
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Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures
(2009)This work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SOI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of ... -
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
(2011)In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point ... -
Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer
(2008)In this work the performance of graded-channel (GC) SOI MOSFETs operating as source-follower buffers is presented. The experimental analysis is performed by comparing the gain and linearity of buffers implemented with GC ... -
Cryogenic operation of FinFETs aiming at analog applications
(2009)FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold ... -
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation
(2008)In this work we present an analysis of harmonic distortion (HD) in graded-channel (GC) gate-all-around (GAA) devices operating in saturation region for analog applications. The study has been performed through device ... -
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs
(2008)This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-κ dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is ... -
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
(2009)The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that ... -
Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS
(2011)This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this ... -
Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications
(2006)We present in this work an analysis of the low temperature operation of Graded-Channel fully depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications, in the range of 100-300 K. This analysis is supported by a ... -
Evaluation of graded-channel SOI MOSFET operation at high temperatures
(2006)This paper presents a comparative analysis between graded-channel (GC) and conventional fully depleted SOI MOSFETs devices operating at high temperatures (up to 300 °C). The electrical characteristics such as threshold ... -
Analysis of temperature-induced saturation threshold voltage degradation in deep-submicrometer ultrathin SOI MOSFETs
(2005)This paper presents a systematic study of the temperature lowering influence on the saturation threshold voltage degradation in ultrathin deep-submicrometer fully depleted silicon-on-insulator (SOI) MOSFETs. It is observed ... -
Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor
(2005)In this paper, we analyze the previously unexpected advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The ... -
Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs
(2007)This work studies the impact of uniaxial, biaxial and combined uniaxial-biaxial strain on the linearity of nMOSFETs from a 65 nm fully depleted (FD) SOI technology. The total harmonic distortion (THD) and third-order ... -
The low-frequency noise behaviour of graded-channel SOI nMOSFETs
(2007)It is shown that the low-frequency noise in graded-channel (GC) SOI nMOSFETs is generally of the flicker or 1/f noise type. The corresponding input-referred noise spectral density is markedly higher than for the conventional ...