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Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures
(2014)
This work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN photodiodes. Measurements performed on fabricated devices show a fivefold improvement of the IDR when the devices are biased in accumulation ...
Compact diamond MOSFET model accounting for PAMDLE applicable down 150 nm node
(2014)
© The Institution of Engineering and Technology 2014.The performance improvements for integrated circuit applications of silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) implemented ...
Using diamond layout style to boost MOSFET frequency response of analogue IC
(2014)
A way to improve the metal-oxide-semiconductor field effect transistor (MOSFET) analogue electrical performance, still little explored, is to modify their aspect form or ratio (AR) by the use of innovative layout styles. ...