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Performance of electronic devices submitted to X-rays and high energy proton beams
(2012)
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two ...
Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
(2012)
The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results ...
High natural radiation in Brazilian sands
(2012)
The present work investigated Brazilian beach sands in order to analyze the total external natural radiation dose using a gamma-ray spectrometry technique. The activities from the radionuclides 40K and the elements from ...