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Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures
(2009)
This work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SOI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of ...
Cryogenic operation of FinFETs aiming at analog applications
(2009)
FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold ...
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
(2009)
The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that ...