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Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
(2009)
The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that ...
Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts
(2006)
This work presents a new and simple approach for modeling silicon on insulator metal-oxide-semiconductor (MOS) dc characteristics for nonrectangular layout devices, based on decomposition of the original shape into trapezoidal ...
A simple current model for edgeless SOI nMOSFET and a 3-D analysis
(2005)
This work presents a new approach for the current model of thin-film, fully depleted SOI edgeless transistors, based on the asymmetric trapezoidal gate model. The most common current model for an edgeless transistor is ...
Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects
(2008)
Fin field effect transistors (FinFETS) are silicon-on-insulator (SOI) transistors with three-dimensional structures. As a result of some fabrication-process limitations (as nonideal anisotropic overetch) some FinFETs have ...