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Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
© 2014 Elsevier Ltd. All rights reserved.Three techniques to implement mechanical stress in n-channel Multiple Gate MOSFETs (MuGFETs) are investigated through 3D simulations and transconductance measurements. They are: ...
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that ...