Now showing items 1-4 of 4
Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures
This work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SOI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of ...
Influence of geometrical parameters on the DC analog behavior of the asymmetric self-cascode FD SOI nMOSFETs
© 2018, Brazilian Microelectronics Society. All rights reserved.This paper assesses the DC analog performance of a composite transistor named Asymmetric Self-Cascode structure, which is formed by two Fully Depleted SOI ...
Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer
In this work the performance of graded-channel (GC) SOI MOSFETs operating as source-follower buffers is presented. The experimental analysis is performed by comparing the gain and linearity of buffers implemented with GC ...
Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
© The Institution of Engineering and Technology 2016.In this paper, the performance of asymmetric self-cascode (A-SC) fully depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors ...