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Low temperature influence on performance and transport of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
(2019)
© 2019 Elsevier LtdThis work evaluates the operation of p-type Si0.7Ge0.3-On-Insulator (SGOI) nanowires from room temperature down to 5.2 K. Electrical characteristics are shown for long channel devices comparing narrow ...