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Analysis of temperature-induced saturation threshold voltage degradation in deep-submicrometer ultrathin SOI MOSFETs
(2005)
This paper presents a systematic study of the temperature lowering influence on the saturation threshold voltage degradation in ultrathin deep-submicrometer fully depleted silicon-on-insulator (SOI) MOSFETs. It is observed ...
Impact of halo implantation on 0.13 μm floating body partially depleted SOI n-MOSFETs in low temperature operation
(2005)
This work studies the effect of halo implantation on the electrical characteristics of deep-submicrometer partially depleted SOI nMOSFETs during low temperature and floating body operation. Parameters such as the drain ...