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Using the wave layout style to boost the digital ICs electrical performance in the radioactive environment
(2015)
© The Electrochemical Society.This paper presents an experimental comparative study between the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) manufactured with the Wave ("S" gate geometry) and the standard ...
Impact of Using the Octagonal Layout for SOI MOSFETs in a High-Temperature Environment
(2015)
© 2015 IEEE.The impact of high-temperature effects is experimentally investigated in the octagonal layout style for planar silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) field-effect transistors (MOSFETs), named ...
Diamond layout style impact on SOI MOSFET in high temperature environment
(2015)
© 2015 Elsevier Ltd.This work performs an experimental comparative study between the Diamond (hexagonal gate geometry) and Standard layouts styles for Metal-Oxide-Semiconductor Field Effect Transistor in high temperatures ...
Electrical behavior of the Diamond layout style for MOSFETs in X-rays ionizing radiation environments
(2015)
© 2015 Elsevier B.V. All rights reserved.This paper aims to describe some innovative layout styles, which are capable to boost the electrical performance and, in the same time, the Total Ionizing Dose (TID) tolerance of ...
An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs
(2015)
© 1980-2012 IEEE.This letter describes the impact of using a new gate geometry (ellipsoidal) rather than the standard one (rectangular) to implement planar metal-oxide-semiconductor field-effect transistors (MOSFETs). Our ...
Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET
(2015)
© 2015 IOP Publishing Ltd.This paper performs an experimental comparative study of the total ionizing dose effects due to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field-effect ...