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Junctionless multiple-gate transistors for analog applications
(2011)
This paper presents the evaluation of the analog properties of nMOS junctionless (JL) multigate transistors, comparing their performance with those exhibited by inversion-mode (IM) trigate devices of similar dimensions. ...
Threshold voltage in junctionless nanowire transistors
(2011)
This work presents a physically based analytical model for the threshold voltage in junctionless nanowire transistors (JNTs). The model is based on the solution of the two-dimensional Poisson equation and includes the ...
High temperature effects on harmonic distortion in submicron SOI graded-channel MOSFETs
(2011)
The effect of elevated temperature on the harmonic distortion in Graded-Channel MOSFETs is presented in this work. The Graded-Channel devices show interesting advantages in terms of nonlinear behavior compared to classical ...
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
(2011)
In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point ...
An explicit multi-exponential model for semiconductor junctions with series and shunt resistances
(2011)
An alternative explicit multi-exponential model is proposed to describe multiple, arbitrary ideality factor, conduction mechanisms in semiconductor junctions with parasitic series and shunt resistances. This Lambert function ...
Cryogenic operation of junctionless nanowire transistors
(2011)
This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at low electric field, and ...
Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS
(2011)
This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this ...