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Junctionless nanowire transistors parameters extraction based on drain current measurements
(2019)
© 2019 Elsevier LtdThe aim of this work is to propose and qualify a systematic method for parameters extraction of Junctionless Nanowire Transistors (JNTs) based on drain current measurements and compact modeling. As ...
Modeling the interface traps-related low frequency noise in triple-gate SOI junctionless nanowire transistors
(2019)
© 2019 Elsevier B.V.The aim of this work is to propose a semi-analytical model for the low frequency noise caused by interface traps in Triple-Gate Junctionless Nanowire Transistors. The proposed model is based on a drain ...