Now showing items 1-4 of 4
Electrical Behavior of Effects LCE and PAMDLE of the Ellipsoidal MOSFETs in a Huge Range of High Temperatures
This paper presents the electrical behavior at high temperature-range of the effects presents in the non-standard gate layout style for MOSFETs, in which they are capable to boost the electrical performance in relation to ...
Methodology to optimize and reduce the total gate area of robust operational transconductance amplifiers by using diamond layout style for MOSFETs
This paper describes a pioneering methodology to design, optimize, and reduce the total gate area of robust Operational Transconductance Amplifiers (OTAs). The Single-Ended Single-Stage (SESS) OTA has been chosen to ...
Using the Octagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
This article describes an experimental comparative study of the matching between the Octo conventional (octagonal gate geometry) and Conventional (rectangular gate shape) n-channel Metal-Oxide-Semiconductor (MOS) Field ...
Using the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect ...