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3D simulation of triple-gate MOSFETs with different mobility regions
(2011-07-05)
In this paper we present a new approach for analyzing 3D structure triple-gate MOSFETs using three different regions, one at the top and two in the sidewalls of the fin, which allows for considering different carrier ...
Experimental evaluation of mismatching on the analog characteristics of GC SOI MOSFETs
(2017-07-28)
This paper presents an experimental study of mismatching on the analog characteristics of fully-depleted graded-channel SOI MOSFET in comparison to uniformly doped transistors. The study is carried out using dedicated ...
Physical Characterization of TiOx layers deposited from sol-gel technique
(2013-09-06)
Titanium Oxide (TiOx) is a material that can be used as optical spacer and injection/transport layer in organic devices as OLEDs and OPDs, as well as a high relative dielectric constant, (high-k), dielectric for organic ...
Asymmetric self-cascode configuration to improve the analog performance of SOI nMOS transistors
(2011-10-11)
In this work an asymmetric self-cascode (SC) structure implemented in a 150nm technology have been studied as a function of the threshold voltage and length of both transistors in the structure, aiming to improve the analog ...
Simulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices
(2015-05-24)
This paper aims at comparing the self-heating effects influence between FinFETs and Junctionless Nanowire Transistors (JNT) based on three-dimensional numerical simulations. The self-heating of JNT made with different ...