Now showing items 1-6 of 6
Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications
We present in this work an analysis of the low temperature operation of Graded-Channel fully depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications, in the range of 100-300 K. This analysis is supported by a ...
Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor
In this paper, we analyze the previously unexpected advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The ...
Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature
© 2016 IOP Publishing Ltd.This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped ...
The low-frequency noise behaviour of graded-channel SOI nMOSFETs
It is shown that the low-frequency noise in graded-channel (GC) SOI nMOSFETs is generally of the flicker or 1/f noise type. The corresponding input-referred noise spectral density is markedly higher than for the conventional ...
High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures
This work studies the use of channel engineering by means of graded-channel profile on double gate SOI MOSFETs for improving the analog performance and comparing their output characteristics with conventional double gate ...
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
This paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. ...