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A proposal to study long-lived isotopes produced by thermal neutron irradiation of digital devices
(2019)
In this work, we present a facility to study errors in digital devices exposed to thermal neutrons from a beam hole in the IEA-R1 nuclear reactor, as well as the long-lived isotopes produced in the irradiation of digital ...
Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
(2019-01-05)
MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs ...