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Charge-based compact analytical model for triple-gate junctionless nanowire transistors
(2016)
© 2016 Elsevier Ltd.A new compact analytical model for short channel triple gate junctionless transistors is proposed. Based on a previous model for double-gate transistors which neglected the fin height effects, a new 3-D ...
Drain current model for short-channel triple gate junctionless nanowire transistors
(2016)
© 2016 Elsevier LtdThis work proposes a numerical charge-based new model to describe the drain current for triple gate junctionless nanowire transistors (3G JNT). The drain current is obtained through a numerical integration ...
Compact model for short-channel symmetric double-gate junctionless transistors
(2015)
© 2015 Elsevier Ltd.Abstract In this work a compact analytical model for short-channel double-gate junctionless transistor is presented, considering variable mobility and the main short-channel effects as threshold voltage ...
Double-gate junctionless transistor model including short-channel effects
(2015)
© 2015 IOP Publishing Ltd.This work presents a physically based model for double-gate junctionless transistors (JLTs), continuous in all operation regimes. To describe short-channel transistors, short-channel effects (SCEs), ...