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Methodology to optimize and reduce the total gate area of robust operational transconductance amplifiers by using diamond layout style for MOSFETs
(2020-11-22)
This paper describes a pioneering methodology to design, optimize, and reduce the total gate area of robust Operational
Transconductance Amplifiers (OTAs). The Single-Ended Single-Stage (SESS) OTA has been chosen to ...
Using the Octagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
(2020-12-04)
This article describes an experimental comparative study of the matching between the Octo conventional (octagonal gate geometry) and Conventional (rectangular gate shape) n-channel Metal-Oxide-Semiconductor (MOS) Field ...
Using the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
(2020-08-10)
This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect ...