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Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs
(2013)
In this work a comparison between the performance of current mirrors implemented with uniformly doped and graded-channel (GC) transistors operating down to low temperature (150 K) is presented. This analysis has been carried ...
Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
(2013)
This paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the ...