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Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs
(2008)
This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-κ dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is ...
Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects
(2008)
Fin field effect transistors (FinFETS) are silicon-on-insulator (SOI) transistors with three-dimensional structures. As a result of some fabrication-process limitations (as nonideal anisotropic overetch) some FinFETs have ...