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Performance of electronic devices submitted to X-rays and high energy proton beams
(2012)
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two ...
Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
(2012)
The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results ...
Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator
(2014)
In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic ...