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Junctionless multiple-gate transistors for analog applications
(2011)
This paper presents the evaluation of the analog properties of nMOS junctionless (JL) multigate transistors, comparing their performance with those exhibited by inversion-mode (IM) trigate devices of similar dimensions. ...
Threshold voltage in junctionless nanowire transistors
(2011)
This work presents a physically based analytical model for the threshold voltage in junctionless nanowire transistors (JNTs). The model is based on the solution of the two-dimensional Poisson equation and includes the ...
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
(2011)
In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point ...
Cryogenic operation of junctionless nanowire transistors
(2011)
This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at low electric field, and ...