Now showing items 1-6 of 6
Junctionless multiple-gate transistors for analog applications
This paper presents the evaluation of the analog properties of nMOS junctionless (JL) multigate transistors, comparing their performance with those exhibited by inversion-mode (IM) trigate devices of similar dimensions. ...
A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors
This work proposes a physically-based definition for the threshold voltage, VTH, of junctionless nanowire transistors and a methodology to extract it. The VTH is defined as the point of equal magnitude for the drift and ...
Threshold voltage in junctionless nanowire transistors
This work presents a physically based analytical model for the threshold voltage in junctionless nanowire transistors (JNTs). The model is based on the solution of the two-dimensional Poisson equation and includes the ...
Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors
A new charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors (SDGJLTM) is proposed and validated with simulations for doping concentrations of 5 × 1018 and 1 × 10 19 cm-3, as well as ...
Trap density characterization through low-frequency noise in junctionless transistors
This work evaluates, for the first time, the trap density of Junctionless Nanowire Transistors (JNTs) of two technologies produced with different gate dielectrics through the low-frequency noise (LFN) characterization. ...
Cryogenic operation of junctionless nanowire transistors
This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at low electric field, and ...