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Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications
(2006)
We present in this work an analysis of the low temperature operation of Graded-Channel fully depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications, in the range of 100-300 K. This analysis is supported by a ...
Evaluation of graded-channel SOI MOSFET operation at high temperatures
(2006)
This paper presents a comparative analysis between graded-channel (GC) and conventional fully depleted SOI MOSFETs devices operating at high temperatures (up to 300 °C). The electrical characteristics such as threshold ...
Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts
(2006)
This work presents a new and simple approach for modeling silicon on insulator metal-oxide-semiconductor (MOS) dc characteristics for nonrectangular layout devices, based on decomposition of the original shape into trapezoidal ...
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
(2006)
This paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. ...