Search

Now showing items 1-2 of 2

The low-frequency noise behaviour of graded-channel SOI nMOSFETs

Simoen E.; Claeys C.; Chung T.M.; Flandre D.; Pavanello M.A.; Martino J.A.; Raskin J.-P. (2007)

It is shown that the low-frequency noise in graded-channel (GC) SOI nMOSFETs is generally of the flicker or 1/f noise type. The corresponding input-referred noise spectral density is markedly higher than for the conventional ...

High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures

Pavanello M.A.; Martino J.A.; Raskin J.-P.; Flandre D. (2005)

This work studies the use of channel engineering by means of graded-channel profile on double gate SOI MOSFETs for improving the analog performance and comparing their output characteristics with conventional double gate ...