Search

Now showing items 1-6 of 6

Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications

Pavanello M.A.; Der Agopian P.G.; Martino J.A.; Flandre D. (2006)

We present in this work an analysis of the low temperature operation of Graded-Channel fully depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications, in the range of 100-300 K. This analysis is supported by a ...

Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor

Cerdeira A.; Aleman M.A.; Pavanello M.A.; Martino J.A.; Vancaillie L.; Flandre D. (2005)

In this paper, we analyze the previously unexpected advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The ...

Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

Pavanello M.A.; De Souza M.; Ribeiro T.A.; Martino J.A.; Flandre D. (2016)

© 2016 IOP Publishing Ltd.This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped ...

The low-frequency noise behaviour of graded-channel SOI nMOSFETs

Simoen E.; Claeys C.; Chung T.M.; Flandre D.; Pavanello M.A.; Martino J.A.; Raskin J.-P. (2007)

It is shown that the low-frequency noise in graded-channel (GC) SOI nMOSFETs is generally of the flicker or 1/f noise type. The corresponding input-referred noise spectral density is markedly higher than for the conventional ...

High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures

Pavanello M.A.; Martino J.A.; Raskin J.-P.; Flandre D. (2005)

This work studies the use of channel engineering by means of graded-channel profile on double gate SOI MOSFETs for improving the analog performance and comparing their output characteristics with conventional double gate ...

Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS

Gimenez S.P.; Pavanello M.A.; Martino J.A.; Flandre D. (2006)

This paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. ...