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Now showing items 11-17 of 17
Impact of halo implantation on 0.13 μm floating body partially depleted SOI n-MOSFETs in low temperature operation
(2005)
This work studies the effect of halo implantation on the electrical characteristics of deep-submicrometer partially depleted SOI nMOSFETs during low temperature and floating body operation. Parameters such as the drain ...
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs
(2008)
This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-κ dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is ...
Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation
(2007)
This work presents the analog performance of nMOS triple-gate FinFETs with high-κ dielectrics, TiN gate material and undoped body from DC measurements. Different fin widths and devices with and without halo implantation ...
Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45 rotated substrates
(2013)
This paper studies the impact of the 45 substrate rotation on the low-frequency noise (LFN) of triple gate nFinFETs. The overall LFN has been extracted for both standard and 45 substrate rotated devices of several fin ...
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices
(2012)
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained ...
Comparative experimental study between tensile and compressive uniaxially stressed nmugfets under x-ray radiation focusing on analog behavior
(2013)
This paper describes a detailed experimental comparative study between nMuGFETs implemented with tensile and compressive stresses when submitted to X-ray radiation, taking into account different doses and different channel ...
Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS
(2011)
This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this ...