Buscar
Itens para a visualização no momento 1-10 of 17
Reliability on ARM Processors Against Soft Errors Through SIHFT Techniques
(2016)
© 1963-2012 IEEE.ARM processors are leaders in embedded systems, delivering high-performance computing, power efficiency, and reduced cost. For this reason, there is a relevant interest for its use in the aerospace industry. ...
γ-Particle coincidence technique for the study of nuclear reactions
(2014)
The Saci-Perere γ ray spectrometer (located at the Pelletron AcceleratorLaboratory - IFUSP) was employed to implement the γ-particle coincidence technique for the study of nuclear reaction mechanisms. For this, the 18O+110Pd ...
Using the wave layout style to boost the digital ICs electrical performance in the radioactive environment
(2015)
© The Electrochemical Society.This paper presents an experimental comparative study between the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) manufactured with the Wave ("S" gate geometry) and the standard ...
Electronic stopping power of Ti, V and Cr ions in Ge and Au at 150–500 keV/u energies
(2017)
© 2017 Elsevier B.V.In this paper new experimental data are presented for the stopping power of Ti, V and Cr ions in Ge and Au, in the 150–500 keV/u energy range. The heavy ions at low energies are produced from the elastic ...
A commercial off-the-shelf pMOS transistor as X-ray and heavy ion detector
(2015)
© Published under licence by IOP Publishing Ltd.Recently, p-channel metal-oxide-semiconductor (pMOS) transistors were suggested as fit for the task of detecting and quantifying ionizing radiation dose. Linearity, small ...
Analyzing Reliability and Performance Trade-Offs of HLS-Based Designs in SRAM-Based FPGAs under Soft Errors
(2017)
© 1963-2012 IEEE.The increasing system complexity of FPGA-based hardware designs and shortening of time-to-market have motivated the adoption of new designing methodologies focused on addressing the current need for ...
A system to measure isomeric state half-lives in the 10 ns to 10 μs range
(2014)
The Isomeric State Measurement System (SISMEI) was developed to search for isomeric nuclear states produced by fusion-evaporation reactions. The SISMEI consists of 10 plastic phoswich telescopes, two lead shields, one ...
Performance of electronic devices submitted to X-rays and high energy proton beams
(2012)
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two ...
Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
(2012)
The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results ...
Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
(2014)
© 2014 IOP Publishing Ltd.The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on- insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing ...