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γ-Particle coincidence technique for the study of nuclear reactions
(2014)
The Saci-Perere γ ray spectrometer (located at the Pelletron AcceleratorLaboratory - IFUSP) was employed to implement the γ-particle coincidence technique for the study of nuclear reaction mechanisms. For this, the 18O+110Pd ...
Electronic stopping power of Ti, V and Cr ions in Ge and Au at 150–500 keV/u energies
(2017)
© 2017 Elsevier B.V.In this paper new experimental data are presented for the stopping power of Ti, V and Cr ions in Ge and Au, in the 150–500 keV/u energy range. The heavy ions at low energies are produced from the elastic ...
A commercial off-the-shelf pMOS transistor as X-ray and heavy ion detector
(2015)
© Published under licence by IOP Publishing Ltd.Recently, p-channel metal-oxide-semiconductor (pMOS) transistors were suggested as fit for the task of detecting and quantifying ionizing radiation dose. Linearity, small ...
Analyzing Reliability and Performance Trade-Offs of HLS-Based Designs in SRAM-Based FPGAs under Soft Errors
(2017)
© 1963-2012 IEEE.The increasing system complexity of FPGA-based hardware designs and shortening of time-to-market have motivated the adoption of new designing methodologies focused on addressing the current need for ...
A system to measure isomeric state half-lives in the 10 ns to 10 μs range
(2014)
The Isomeric State Measurement System (SISMEI) was developed to search for isomeric nuclear states produced by fusion-evaporation reactions. The SISMEI consists of 10 plastic phoswich telescopes, two lead shields, one ...
Performance of electronic devices submitted to X-rays and high energy proton beams
(2012)
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two ...
Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
(2012)
The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results ...
Exploring the potential of the São Paulo potential
(2010)
© 2010 Owned by the authors, published by EDP Sciences.Recent development of an imaginary potential based on the São Paulo potential is briefly presented. Further developments of the model in order to describe weakly bound ...
Reliability-Performance Analysis of Hardware and Software Co-Designs in SRAM-Based APSoCs
(2018)
© 1963-2012 IEEE.All programmable system-on-chip (APSoC) devices provide higher system performance and programmable flexibility at lower costs compared to standalone field-programmable gate array devices and processors. ...
Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA
(2017)
© 1963-2012 IEEE.This paper shows the impact of low linear energy transfer heavy ions on the reliability of 28-nm Bulk static random access memory (RAM) cells from Artix-7 field-programmable gate array. Irradiation tests ...