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Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts
(2006)
This work presents a new and simple approach for modeling silicon on insulator metal-oxide-semiconductor (MOS) dc characteristics for nonrectangular layout devices, based on decomposition of the original shape into trapezoidal ...
A simple current model for edgeless SOI nMOSFET and a 3-D analysis
(2005)
This work presents a new approach for the current model of thin-film, fully depleted SOI edgeless transistors, based on the asymmetric trapezoidal gate model. The most common current model for an edgeless transistor is ...
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices
(2012)
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained ...
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
(2006)
This paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. ...
Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects
(2008)
Fin field effect transistors (FinFETS) are silicon-on-insulator (SOI) transistors with three-dimensional structures. As a result of some fabrication-process limitations (as nonideal anisotropic overetch) some FinFETs have ...
Comparative experimental study between tensile and compressive uniaxially stressed nmugfets under x-ray radiation focusing on analog behavior
(2013)
This paper describes a detailed experimental comparative study between nMuGFETs implemented with tensile and compressive stresses when submitted to X-ray radiation, taking into account different doses and different channel ...
Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS
(2011)
This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this ...