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Now showing items 11-16 of 16
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models
(2017)
© 2016 Elsevier LtdThe Drain Induced Barrier Lowering (DIBL) behavior in Ultra-Thin Body and Buried oxide (UTBB) transistors is investigated in details in the temperature range up to 150 °C, for the first time to the best ...
Using diamond layout style to boost MOSFET frequency response of analogue IC
(2014)
A way to improve the metal-oxide-semiconductor field effect transistor (MOSFET) analogue electrical performance, still little explored, is to modify their aspect form or ratio (AR) by the use of innovative layout styles. ...
Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
(2016)
© The Institution of Engineering and Technology 2016.In this paper, the performance of asymmetric self-cascode (A-SC) fully depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors ...
Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
(2013)
This paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the ...
Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET
(2015)
© 2015 IOP Publishing Ltd.This paper performs an experimental comparative study of the total ionizing dose effects due to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field-effect ...
Modeling of thin-film lateral SOI PIN diodes with an alternative multi-branch explicit current model
(2012)
We propose the use of an alternative multi-exponential model to describe multiple conduction mechanisms in thin-film SOI PIN diodes with parasitic series resistance over a wide operating temperature range, from 90 to 390 ...