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Now showing items 11-13 of 13
Trap density characterization through low-frequency noise in junctionless transistors
(2013)
This work evaluates, for the first time, the trap density of Junctionless Nanowire Transistors (JNTs) of two technologies produced with different gate dielectrics through the low-frequency noise (LFN) characterization. ...
Substrate bias influence on the operation of junctionless nanowire transistors
(2014)
The aim of this paper is to analyze the substrate bias influence on the operation of junctionless nanowire transistors based on 3-D simulated and experimental results, accomplished by modeled data. The threshold voltage, ...
Cryogenic operation of junctionless nanowire transistors
(2011)
This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at low electric field, and ...