Search
Now showing items 11-13 of 13
Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45 rotated substrates
(2013)
This paper studies the impact of the 45 substrate rotation on the low-frequency noise (LFN) of triple gate nFinFETs. The overall LFN has been extracted for both standard and 45 substrate rotated devices of several fin ...
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices
(2012)
Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained ...
Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS
(2011)
This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this ...