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High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures
(2005)
This work studies the use of channel engineering by means of graded-channel profile on double gate SOI MOSFETs for improving the analog performance and comparing their output characteristics with conventional double gate ...
Auto-Atendimento versus Atendimento Pessoal no Setor Bancário: um estudo exploratório sob a ótica dos estudantes universitários
(2005-10-05)
Este éumestudoexploratóriodosetorde serviços,mais
especificamente do setor bancário. Nele procuramos
levantar e mensurar, por meio de dimensões de qualidade
(Aparência Física, Confiabilidade, Rapidez de Resposta,
Segurança ...
Extração de parâmetros da tecnologia SOI através de capacitores
(2005-01-05)
Neste trabalho serão apresentadas as curvas
características de Capacitores SOI-MOS e métodos
de extração de parâmetros de processo e elétricos a
partir destas curvas. Os métodos são testados e
validados por simulações ...
Pit morphology and its relation to microstructure of 850°C aged duplex stainless steel
(2005)
The relation between pit morphology and microstructure formed during 850°C isothermal aging of UNS S31803 duplex stainless steel (DSS) could be reached through the explanation of pit nucleation and growth during potentiodynamic ...
A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation
(2005)
In this work a continuous analytical model for analog simulation of submicron asymmetrically doped silicon-on-insulator (SOI) nMOSFET using the graded-channel (GC) architecture, valid from weak to strong inversion regimes, ...
A simple current model for edgeless SOI nMOSFET and a 3-D analysis
(2005)
This work presents a new approach for the current model of thin-film, fully depleted SOI edgeless transistors, based on the asymmetric trapezoidal gate model. The most common current model for an edgeless transistor is ...