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High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures
(2005)
This work studies the use of channel engineering by means of graded-channel profile on double gate SOI MOSFETs for improving the analog performance and comparing their output characteristics with conventional double gate ...
Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation
(2007)
This work presents the analog performance of nMOS triple-gate FinFETs with high-κ dielectrics, TiN gate material and undoped body from DC measurements. Different fin widths and devices with and without halo implantation ...
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
(2009)
The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that ...
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
(2006)
This paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. ...