Evaluation of the high temperatures influence on high frequency C-V curves of MOS capacitor

Abstract

It is presented numerical bi-dimensional simulations results concerning the high frequency capacitance versus voltage (C-V) characteristic of the MOS capacitor operating from room temperature up to 573K using AC analysis. The results show that the C-V curves behavior is influenced by substrate doping concentration, substrate and gate materials. Also, it is presented experimental results concerning to the high frequency C-V characteristic of a sample MOS capacitor, confirming the results obtained through simulations. ©The Electrochemical Society.