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dc.contributor.authorALVES, C. R.
dc.contributor.authorD'OLIVEIRA, L. M.
dc.contributor.authorMichelly De Souza
dc.date.accessioned2022-12-01T06:03:25Z
dc.date.available2022-12-01T06:03:25Z
dc.date.issued2022-07-04
dc.identifier.citationALVES, C. R.; D'OLIVEIRA, L. M.; DE SOUZA, .M. Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs. 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022, Jul. 2022.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4652
dc.description.abstract© 2022 IEEE.This work presents a comparative study of the transcapacitances of asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs, by means of two-dimensional numerical simulations. Simulated results show that the gate-to-drain capacitance is smaller for the ASC SOI device if compared to the GC SOI device, despite of the applied VDS.
dc.relation.ispartof2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
dc.rightsAcesso Restrito
dc.titleComparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs
dc.typeArtigo de evento
dc.identifier.doi10.1109/LAEDC54796.2022.9907771
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.subject.otherlanguageAnalog Performance
dc.subject.otherlanguageAsymmetric
dc.subject.otherlanguageCapacitance
dc.subject.otherlanguageMOSFET
dc.subject.otherlanguageSelf-cascode
dc.subject.otherlanguageSilicon-On-Insulator
fei.scopus.citations2
fei.scopus.eid2-s2.0-85141412441
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85141412441&origin=inward
fei.scopus.updated2026-01-27
fei.scopus.subjectAnalog performance
fei.scopus.subjectAsymmetric
fei.scopus.subjectGraded channels
fei.scopus.subjectMOS-FET
fei.scopus.subjectMOSFETs
fei.scopus.subjectnMOSFETs
fei.scopus.subjectSelf-cascode
fei.scopus.subjectSilicon on insulator
fei.scopus.subjectSilicon-on-insulator devices
fei.scopus.subjectTranscapacitance


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