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dc.contributor.authorMichelly De Souza
dc.contributor.authorBARRAUD, S.
dc.contributor.authorCASSE, M.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOR, O.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2022-03-01T06:05:19Z
dc.date.accessioned2024-02-27T16:29:52Z
dc.date.available2022-03-01T06:05:19Z
dc.date.available2024-02-27T16:29:52Z
dc.date.issued2021-09-06
dc.identifier.citationDE SOUZA, M.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOR, O.; PAVANELLO, M. A. Experimental assessment of variability in junctionless nanowire nMOS transistors. p. 223-226, 2021.
dc.identifier.issn1930-8876
dc.identifier.urihttps://hdl.handle.net/20.500.12032/122155
dc.description.abstractIn this work, experimental assessment of the variability of threshold voltage and drain current in junctionless nanowire n MOS transistors is presented. Die-to-die variability of threshold voltage and drain current is presented and compared to inversion mode nanowire with the same dimensions. Although the junctionless nanowires have shown larger threshold voltage matching coefficients than inversion mode devices, the variability obtained experimentally has shown to be smaller than predicted by some simulations reported in the literature. Also, it has been shown that as the channel length of junctionless nanowire transistors is reduced, the current variability becomes smaller than in inversion mode nanowires, at the same current level and dimensions.
dc.relation.ispartofEuropean Solid-State Device Research Conference
dc.rightsAcesso Restrito
dc.titleExperimental Assessment of Variability in Junctionless Nanowire nMOS Transistors
dc.typeArtigo de evento


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